This book further on gives a general vision of the state of the technique by the investigators recognized international level of the architectures of necessary the electronicses for the era NanoCMOS and. Challenges related to the extension of the nanoelectrónica CMOS, approach with the different nuclei and memory CMOS options from devices in the first part of the book. The second part reviews the concepts new device for the nanoelectrónica Beyond CMOS. Which are the fundamental limits of basic CMOS, and we can improve the scale by the introduction of new materials or processes? The use of the new architectures of SOI, multigates, or multi-channel, to improve the balance between yield and consumption of energy and to make flexible the requirements of new material integration? It can replace the quantum computation based on binary protocols to improve the capacity of processing of information? Some questions are responded in this book. Content: Nanoelectrónica CMOS. Arriving at the end of the Trip ticket: Basic CMOS: the physical and technological limitations of the subsequent NanoCMOS devices to the aim of the Trip ticket and years (Deleonibus S, Or Faynot, Except for B of, Ernst T, C Him Royer, Poiroux T & Vinet M); Outpost of the CMOS the devices of bulk and SOI: Physics, modeled and characterization (T & G Poiroux Him Carval), Structures and devices of Carrier transport Properties of Outpost of the CMOS using channels of the High Mobility (S Takagi, T Tezuka, T Irisawa, S Nakaharai, T Numata, K Usuda, N Sugiyama, M Shichijo, R & S Nakane Sugahara); Dielectric High Door (H Wong, Shiraishi K, K & H Kakushima Iwai); Manufacture of source and the superficial drainage Extreme Junction (B Mizuno), New Schemes of Interconnection: Aim of Cobre, optical interconnections? (Cassan Laval S, Vivien L, and, D-Marris Morini and Fedeli JM); Memories: Key technologies of Design and subjects for the memories (Kim Jeong K & G); FeRAM and Tecnologías of the MRAM (Arimoto Y); load storage outpost Memories: Of the nanocristales of silicon for molecular devices (B & Of Safe Molas G); new concepts for the nanoelectrónica. New Ways for High CMOS until after the aim of the Trip ticket: devices of a single electron and Applications (Gautier J, X & Jehl SANQUER M); Electronic properties of organic unilayers and Molecular Devices (Vuillaume D); Electronics of nanotubos of carbon (Derycke V, To Filoramo and JP Bourgoin), electronics of spin (KJ Lee and Lim SH); to more long term: the quantum processing of information and the communication (Jorrand P).

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